product summary part number bv dss r ds(on) i d irhy7230cm 200v 0.40 w 9.4a irhy8230cm 200v 0.40 w 9.4a features: n radiation hardened up to 1 x 10 6 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron tolerant n identical pre- and post-electrical test conditions n avalanche energy rating n dynamic dv/dt rating n simple drive requirements n ease of paralleling n hermetically sealed n electrically isolated n ceramic eyelets absolute maximum ratings parameter irhy7230cm, irhy8230cm units i d @ v gs = 12v, t c = 25c continuous drain current 9.4 i d @ v gs = 12v, t c = 100c continuous drain current 6.0 i dm pulsed drain current ? 37 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/k ? v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 150 mj i ar avalanche current ? 5.5 a e ar repetitive avalanche energy ? 7.5 mj dv/dt peak diode recovery dv/dt ? 16 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. (1.6mm) from case for 10s) weight 7.0(typical) g pre-radiation 200volt, 0.40 w w w w w , mega rad hard hexfet international rectifiers mega rad hard technol- ogy hexfets demonstrate virtual immunity to see failure. additionally, under identical pre- and post-ra- diation test conditions, international rectifiers rad hard hexfets retain identical electrical specifica- tions up to 1 x 10 5 rads (si) total dose. no compen- sation in gate drive circuitry is required. these devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal operation within a few microseconds. since the rad hard process utilizes international rectifiers patented hexfet technology, the user can expect the highest quality and reliability in the indus- try. rad hard hexfet transistors also feature all of the well-established advantages of mosfets, such as voltage control, very fast switching, ease of paral- leling and temperature stability of the electrical pa- rameters. they are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. o c a preliminary data sheet no. pd - 9.1273b repetitive avalanche and dv/dt rated JANSR2N7381 jansh2n7381 hexfet ? transistor n-channel mega rad hard [ref: mil-prf-19500/614] irhy7230cm irhy8230cm 11/4/97
irhy7230cm, irhy8230cm, jansr-, jansh-, 2n7381 devices pre-radiation electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 200 v v gs = 0 v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.23 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source 0.40 v gs = 12v, i d = 6.0a on-state resistance 0.49 w v gs = 12v, i d = 9.4a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 2.5 s ( )v ds > 15v, i ds = 6.0a ? i dss zero gate voltage drain current 25 v ds = 0.8 x max rating,v gs =0v 250 v ds = 0.8 x max rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 50 v gs = 12v, i d = 9.4a q gs gate-to-source charge 10 nc v ds = max rating x 0.5 q gd gate-to-drain (miller) charge 25 t d (on) turn-on delay time 35 v dd = 100v, i d = 9.4a, t r rise time 75 r g = 7.5 w t d (off) turn-off delay time 70 t f fall time 60 l d internal drain inductance 8.7 l s internal source inductance 8.7 c iss input capacitance 1200 v gs = 0v, v ds = 25v c oss output capacitance 250 pf f = 1.0mhz c rss reverse transfer capacitance 63 na w ? nh ns measured from dr a i n l e a d , 6mm (0.25 in) from pac kage t o c e n t e r o f d i e. measured from source lead, 6mm (0.25 in) from pac kage to source bonding pad. modified mosfet symbol sho w - i n g t h e i n t e r nal inductances . m a source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 9.4 modified mosfet symbol sho w i n g t h e i n t e gr a l i sm pulse source current (body diode) ? 37 r eve r s e p - n j u n c t i o n r e c t i f i e r. v sd diode forward voltage 1.4 v t j = 25c, i s = 9.4a, v gs = 0v ? t rr reverse recovery time 460 ns t j = 25c, i f = 9.4a, di/dt 100a/ m s q rr reverse recovery charge 2.4 m cv dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units test conditions r thjc junction-to-case 1.67 k/w ? r thja junction-to-ambient 80 typical socket mount
irhy7230cm, irhy8230cm, jansr-, jansh-, 2n7381 devices table 2. high dose rate ? 10 11 rads (si)/sec 10 12 rads (si)/sec parameter min typ max min typ max units test conditions v dss drain-to-source voltage 160 160 v applied drain-to-source voltage during gamma-dot i pp 20 20 a peak radiation induced photo-current di/dt 160 8.0 a/sec rate of r ise of photo-current l 1 1.0 20 h circuit inductance required to limit di/dt table 3. single event effects ? let (si) fluence range v ds bias v gs bias parameter typical units ion (mev/mg/cm 2 ) (ions/cm 2 ) (m) (v) (v) bv dss 200 v ni 28 1 x 10 5 ~41 160 -5 radiation performance of rad hard hexfets table 1. low dose rate ? ? irhy7230cm irhy8230cm parameter 100k rads (si) 1000k rads (si) units test conditions ? min max min max bv dss drain-to-source breakdown voltage 200 200 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = +20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 25 a v ds =0.8 x max rating, v gs =0v r ds(on)1 static drain-to-source ? 0.40 0.53 w v gs = 12v, i d =6.0a on-state resistance one v sd diode forward voltage ? 1.4 1.4 v t c = 25c, i s = 9.4a,v gs = 0v international rectifier radiation hardened hexfets are tested to verify their hardness capability. the hard- ness assurance program at international rectifier uses two radiation environments. every manufacturing lot is tested in a low dose rate (total dose) environment per mll-std-750, test method 1019. international rectifier has imposed a standard gate voltage of 12 volts per note 6 and a v dss bias condition equal to 80% of the device r ated voltage per note 7. pre- and post-radiation limits of the devices irradiated to 1 x 10 5 rads (si) are identi- cal and are presented in table 1, column 1, irhy7230cm. the values in table 1 will be met for either of the two low dose rate test circuits that are used. both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct com- parison. it should be noted that at a radiation level of 1 x 10 5 rads (si) no changes in limits are specified in dc parameters. high dose rate testing may be done on a special request basis using a dose rate up to 1 x 10 12 rads (si)/sec. international rectifier radiation hardened hexfets have been characterized in neutron and heavy ion single event effects (see) environments. single event effects characterization is shown in table 3. radiation - characteristics
irhy7230cm, irhy8230cm, jansr-, jansh-, 2n7381 devices pre-radiation fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 5 6 7 8 9 10 11 12 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 9.4a
irhy7230cm, irhy8230cm, jansr-, jansh-, 2n7381 devices fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 9.4a v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2.2 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j pre-radiation
irhy7230cm, irhy8230cm, jansr-, jansh-, 2n7381 devices pre-radiation fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 2 4 6 8 10 t , case temperature ( c) i , drain current (a) c d
irhy7230cm, irhy8230cm, jansr-, jansh-, 2n7381 devices q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.2a 5.9a 9.4a pre-radiation
irhy7230cm, irhy8230cm, jansr-, jansh-, 2n7381 devices pre-radiation ? repetitive rating; pulse width limited by maximum junction temperature. refer to current hexfet reliability report. ? @ v dd = 50v, starting t j = 25c, e as = [0.5 * l * (i l 2 ) ] peak i l = 9.4a, v gs = 12v, 25 r g 200 w ? i sd 9.4a, di/dt 660a/ m s, v dd bv dss , t j 150c suggested rg = 2.35 w ? pulse width 300 m s; duty cycle 2% ? k/w = c/w w/k = w/c ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019. ? total dose irradiation with v ds bias. v ds = 0.8 rated bv dss (pre-radiation) applied and v gs = 0 during irradiation per mll-std-750, method 1019. ? this test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 mev), 30 nsec pulse. ? process characterized by independent laboratory. ? all pre-radiation and post-radiation test conditions are identical to facilitate direct comparison for circuit applications. case outline and dimensions to 257aa world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 11/97 pin assignment caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
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